IPI04CN10N G
| Manufacturer Part Number | IPI04CN10N G |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | MOSFET N-CH 100V 100A TO262-3 |
| Package | PG-TO262-3 |
| In Stock | 4801 pcs |
| Data sheet | IPx04CN10N GPart Number GuideCoolMOS/OptiMOS Halogen Free 10/Dec/2008Multiple Devices 30/Aug/2013 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO262-3 |
| Series | OptiMOS™ |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 100A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Package | Tube |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Base Product Number | IPI04C |
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